Anderson localization in doped semiconductors

نویسندگان

چکیده

We theoretically consider the problem of doping induced insulator to metal transition in bulk semiconductors by obtaining density as a function compensation, assuming that is an Anderson localization controlled Ioffe-Regel-Mott (IRM) criterion. calculate mean free path, on highly doped metallic side, arising from carrier scattering ionized dopants, which we model quenched random charged impurities. The Coulomb disorder dopants screened carriers themselves, leading integral equation for localization, defined density-dependent path being equal inverse Fermi wave number, dictated IRM Solving this approximately analytically and exactly numerically, provide detailed results critical metal-insulator transition.

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ژورنال

عنوان ژورنال: Physical review

سال: 2023

ISSN: ['0556-2813', '1538-4497', '1089-490X']

DOI: https://doi.org/10.1103/physrevb.107.174204